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| LESHAN RADIO COMPANY, LTD. NPN RF Amplifier Transistor Surface Mount COLLECTOR 3 MSC3130T1 3 2 1 2 BASE 1 EMITTER CASE 318D-03, STYLE 1 SC-59 MAXIMUM RATINGS (T A = 25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V CBO V CEO V EBO IC Symbol PD TJ T stg Value 15 10 3.0 50 Max 200 150 -55 ~ +150 Symbol I CBO V CEO V EBO Unit Vdc Vdc Vdc mAdc Unit mW C C Min -- 10 3.0 75 -- 1.4 Max 1.0 -- -- 400 0.5 2.5 Unit Adc Vdc Vdc -- Vdc GHz THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Characteristic Collector Cutoff Current (V CB = 10 Vdc, I E = 0) Collector-Emitter Breakdown Voltage (I C = 2.0 mAdc, I B = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0) DC Current Gain (1) (V CE = 4.0 Vdc, I C = 5.0 mAdc) Collector-Emitter Saturation Voltage (I C = 20 mAdc, I B = 4.0 mAdc) Current-Gain-Bandwidth Produc (V CB = 4.0 Vdc, I E = -5.0 mAdc) 1. Pulse Test: Pulse Width < 300 s, D.C.<2%. ELECTRICAL CHARACTERISTICS (T A = 25 C) h FE V CE(sat) tf T DEVICE MARKING Marking Symbol 1S X The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. N5-1/1 |
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